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Journal description
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Details for article 20 of 29 found articles
| Title: |
Molybdenum and low-temperature annealing of a silicon power P–i–N diode |
| Author: |
Vobecký, J. Komarnitskyy, V. Záhlava, V. |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 51 (2011) nr. 3 pages 6 p. |
| Year: |
2011 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 20 of 29 found articles
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