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Journal description
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Details for article 4 of 59 found articles
| Title: |
A model for length of saturation velocity region in double-gate Graphene nanoribbon transistors |
| Author: |
Ghadiry, M.H. Nadi S., M. Ahmadi, M.T. Abd Manaf, Asrulnizam |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 51 (2011) nr. 12 pages 4 p. |
| Year: |
2011 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 4 of 59 found articles
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