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Journal description
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Details for article 55 of 140 found articles
| Title: |
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress |
| Author: |
Di Lecce, Valerio Esposto, Michele Bonaiuti, Matteo Meneghesso, Gaudenzio Zanoni, Enrico Fantini, Fausto Chini, Alessandro |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 50 (2010) nr. 9-11 pages 5 p. |
| Year: |
2010 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 55 of 140 found articles
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