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Journal description
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Details for article 3 of 22 found articles
| Title: |
A surface potential and quasi-Fermi potential based drain current model for pocket-implanted MOS transistors in subthreshold regime |
| Author: |
Baishya, S. |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 49 (2009) nr. 7 pages 8 p. |
| Year: |
2009 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 3 of 22 found articles
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