Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
Titel:
Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
Auteur:
Dammann, M. Pletschen, W. Waltereit, P. Bronner, W. Quay, R. Müller, S. Mikulla, M. Ambacher, O. van der Wel, P.J. Murad, S. Rödle, T. Behtash, R. Bourgeois, F. Riepe, K. Fagerlind, M. Sveinbjörnsson, E.Ö.