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Details for article 3 of 28 found articles
| Title: |
Anomalous narrow width effect in p-channel metal–oxide–semiconductor surface channel transistors using shallow trench isolation technology |
| Author: |
Lau, W.S. See, K.S. Eng, C.W. Aw, W.K. Jo, K.H. Tee, K.C. Lee, James Y.M. Quek, Elgin K.B. Kim, H.S. Chan, Simon T.H. Chan, L. |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 48 (2008) nr. 6 pages 4 p. |
| Year: |
2008 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 3 of 28 found articles
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