|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 2 of 24 found articles
| Title: |
An explanation of the dependence of the effective saturation velocity on gate voltage in sub-0.1μm metal–oxide–semiconductor transistors by quasi-ballistic transport theory |
| Author: |
Lau, W.S. Yang, Peizhen Ho, V. Toh, L.F. Liu, Y. Siah, S.Y. Chan, L. |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 48 (2008) nr. 10 pages 8 p. |
| Year: |
2008 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 2 of 24 found articles
| << previous | next >> |