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Journal description
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Details for article 6 of 25 found articles
| Title: |
A review of latchup and electrostatic discharge (ESD) in BiCMOS RF silicon germanium technologies: Part I—ESD |
| Author: |
Voldman, Steven H. |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 45 (2005) nr. 2 pages 18 p. |
| Year: |
2005 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 6 of 25 found articles
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