|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 18 of 25 found articles
| Title: |
Modelling negative bias temperature instabilities in advanced p-MOSFETs |
| Author: |
Houssa, M. |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 45 (2005) nr. 1 pages 10 p. |
| Year: |
2005 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 18 of 25 found articles
| << previous | next >> |