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  Interfacial properties and reliability of SiO2 grown on 6H-SiC in dry O2 plus trichloroethylene
 
 
Title: Interfacial properties and reliability of SiO2 grown on 6H-SiC in dry O2 plus trichloroethylene
Author: Lai, P.T.
Xu, J.P.
Wu, H.P.
Chan, C.L.
Appeared in: Microelectronics reliability
Paging: Volume 44 (2004) nr. 4 pages 4 p.
Year: 2004
Contents:
Publisher: Elsevier Science Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

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