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                                       Details for article 6 of 110 found articles
 
 
  Analysis of the effect of the gate oxide breakdown on SRAM stability
 
 
Title: Analysis of the effect of the gate oxide breakdown on SRAM stability
Author: Rodrı́guez, R.
Stathis, J.H.
Linder, B.P.
Kowalczyk, S.
Chuang, C.T.
Joshi, R.V.
Northrop, G.
Bernstein, K.
Bhavnagarwala, A.J.
Lombardo, S.
Appeared in: Microelectronics reliability
Paging: Volume 42 (2002) nr. 9-11 pages 4 p.
Year: 2002
Contents:
Publisher: Elsevier Science Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 6 of 110 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands