|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 24 of 110 found articles
| Title: |
Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO2 Gate Oxide on MOS Structures |
| Author: |
Blasco, X. Nafrı́a, M. Aymerich, X. |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 42 (2002) nr. 9-11 pages 4 p. |
| Year: |
2002 |
| Contents: | |
| Publisher: |
Elsevier Science Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 24 of 110 found articles
| << previous | next >> |