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Journal description
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Details for article 18 of 26 found articles
| Title: |
Modeling of the I–V characteristics of high-field stressed MOS structures using a Fowler–Nordheim-type tunneling expression |
| Author: |
Miranda, E. Redin, G. Faigón, A. |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 42 (2002) nr. 6 pages 7 p. |
| Year: |
2002 |
| Contents: | |
| Publisher: |
Elsevier Science Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 18 of 26 found articles
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