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                                       Details for article 19 of 20 found articles
 
 
  The abnormality in gate oxide failure induced by stress-enhanced diffusion of polycrystalline silicon
 
 
Title: The abnormality in gate oxide failure induced by stress-enhanced diffusion of polycrystalline silicon
Author: Ahn, Yongseok
Lee, Sanghyun
Koh, Gwanhyeob
Chung, Taeyoung
Kim, Kinam
Appeared in: Microelectronics reliability
Paging: Volume 42 (2002) nr. 3 pages 6 p.
Year: 2002
Contents:
Publisher: Elsevier Science Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 19 of 20 found articles
 
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