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                                       Details for article 13 of 20 found articles
 
 
  MOS characteristics of NO-grown oxynitrides on n-type 6H-SiC
 
 
Title: MOS characteristics of NO-grown oxynitrides on n-type 6H-SiC
Author: Chakraborty, S
Lai, P.T
Kwok, P.C.K
Appeared in: Microelectronics reliability
Paging: Volume 42 (2002) nr. 3 pages 4 p.
Year: 2002
Contents:
Publisher: Elsevier Science Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 13 of 20 found articles
 
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