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                                       Details for article 2 of 15 found articles
 
 
  Breakdown fields and conduction mechanisms in thin Ta2O5 layers on Si for high density DRAMs
 
 
Title: Breakdown fields and conduction mechanisms in thin Ta2O5 layers on Si for high density DRAMs
Author: Atanassova, E.
Paskaleva, A.
Appeared in: Microelectronics reliability
Paging: Volume 42 (2002) nr. 2 pages 17 p.
Year: 2002
Contents:
Publisher: Elsevier Science Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 2 of 15 found articles
 
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