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Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 2 of 23 found articles
| Title: |
Application of forward gated-diode R–G current method in extracting F–N stress-induced interface traps in SOI NMOSFETs |
| Author: |
He, Jin Zhang, Xing Huang, Ru Wang, Yang-yuan |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 42 (2002) nr. 1 pages 4 p. |
| Year: |
2002 |
| Contents: | |
| Publisher: |
Elsevier Science Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 2 of 23 found articles
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