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Journal description
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Details for article 11 of 19 found articles
| Title: |
Investigations of impact ionization phenomena in advanced transistors and speed-power improvement of BiMOS SRAM cells based on reverse base current effect |
| Author: |
Bubennikov, Alexander N Zykov, Andrey V |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 41 (2001) nr. 2 pages 10 p. |
| Year: |
2001 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 11 of 19 found articles
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