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Journal description
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Details for article 3 of 22 found articles
| Title: |
A study of the effects of tunneling currents and reliability of sub-2 nm gate oxides on scaled n-MOSFETs |
| Author: |
Yang, Nian Wortman, Jimmie J |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 41 (2001) nr. 1 pages 10 p. |
| Year: |
2001 |
| Contents: | |
| Publisher: |
Elsevier Science Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 3 of 22 found articles
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