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Journal description
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Details for article 8 of 87 found articles
| Title: |
Annealing behavior of gate oxide leakage current after quasi-breakdown |
| Author: |
Xu, Zhen Cho, Byung Jin Li, Ming Fu |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 40 (2000) nr. 8-10 pages 6 p. |
| Year: |
2000 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 8 of 87 found articles
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