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Journal description
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Details for article 3 of 20 found articles
| Title: |
Analysis of Fowler–Nordheim injection in NO nitrided gate oxide grown on n-type 4H–SiC |
| Author: |
Li, Hui-Feng Dimitrijev, Sima Sweatman, Denis Harrison, H.Barry |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 40 (2000) nr. 2 pages 4 p. |
| Year: |
2000 |
| Contents: | |
| Publisher: |
Elsevier Science Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 3 of 20 found articles
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