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Details for article 18 of 20 found articles

SiGe, GaAs, and InP Heterojunction Bipolar Transistors; Jiann S. Yuan, John Wiley & Sons, Inc., 605 Third Avenue, New York, NY 10158-0012, USA, 1999, 463 pp. ISBN: 0-471-19746-7, GBP 64.50



Title:	SiGe, GaAs, and InP Heterojunction Bipolar Transistors; Jiann S. Yuan, John Wiley & Sons, Inc., 605 Third Avenue, New York, NY 10158-0012, USA, 1999, 463 pp. ISBN: 0-471-19746-7, GBP 64.50
Author:	Karamarković, J
Appeared in:	Microelectronics reliability
Paging:	Volume 40 (2000) nr. 2 pages 1 p.
Year:	2000
Contents:
Publisher:	Elsevier Science Ltd
Source file:	Elektronische Wetenschappelijke Tijdschriften

Details for article 18 of 20 found articles

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Koninklijke Bibliotheek - National Library of the Netherlands