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                                       Details for article 19 of 20 found articles
 
 
  Time-dependent dielectric wearout technique with temperature effect for reliability test of ultrathin (<2.0 nm) single layer and dual layer gate oxides
 
 
Title: Time-dependent dielectric wearout technique with temperature effect for reliability test of ultrathin (<2.0 nm) single layer and dual layer gate oxides
Author: Wu, Yider
Xiang, Qi
Yang, Jean Y.M.
Lucovsky, Gerald
Lin, Ming-Ren
Appeared in: Microelectronics reliability
Paging: Volume 40 (2000) nr. 12 pages 9 p.
Year: 2000
Contents:
Publisher: Elsevier Science Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 19 of 20 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands