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                                       Details for article 12 of 27 found articles
 
 
  Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides
 
 
Title: Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides
Author: Goguenheim, D.
Bravaix, A.
Vuillaume, D.
Mondon, F.
Candelier, Ph.
Jourdain, M.
Meinertzhagen, A.
Appeared in: Microelectronics reliability
Paging: Volume 39 (1999) nr. 2 pages 5 p.
Year: 1999
Contents:
Publisher: Elsevier Science Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 12 of 27 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands