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Journal description
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Details for article 19 of 26 found articles
| Title: |
On the determination of the time-dependent degradation laws and device lifetime in deep submicron n- and p- channel SOI MOSFETs |
| Author: |
Renn, S.-H Balestra, F |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 38 (1998) nr. 12 pages 6 p. |
| Year: |
1998 |
| Contents: | |
| Publisher: |
Elsevier Science Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 19 of 26 found articles
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