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Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
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Details for article 3 of 17 found articles
| Title: |
Change in d.c. and 1/f noise characteristics of n-submicron MOSFETs due to hot-carrier degradation |
| Author: |
Vandamme, L.K.J. Li, X. |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 38 (1998) nr. 1 pages 7 p. |
| Year: |
1998 |
| Contents: | |
| Publisher: |
Elsevier Science Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 3 of 17 found articles
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