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  A mechanism of threshold voltage changes for WN x gate GaAs MESFETs in high temperature storage life tests
 
 
Title: A mechanism of threshold voltage changes for WN x gate GaAs MESFETs in high temperature storage life tests
Author: Kitaura, Y.
Ishida, K.
Mizoguchi, T.
Uchitomi, N.
Matsunaga, T.
Mochizuki, M.
Nii, R.
Appeared in: Microelectronics reliability
Paging: Volume 35 (1995) nr. 12 pages 6 p.
Year: 1995
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 1 of 11 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands