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                                       Details for article 15 of 19 found articles
 
 
  Reversible dielectric breakdown of thin gate oxides in MOS devices
 
 
Title: Reversible dielectric breakdown of thin gate oxides in MOS devices
Author: Suñé, J.
Nafría, M.
Aymerich, X.
Appeared in: Microelectronics reliability
Paging: Volume 33 (1993) nr. 7 pages 9 p.
Year: 1993
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 15 of 19 found articles
 
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