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                                       Details for article 94 of 153 found articles
 
 
  Photoluminescence of the residual shallow acceptor in In xGa 1 − x grown on GaAs (001) by molecular beam epitaxy
 
 
Title: Photoluminescence of the residual shallow acceptor in In xGa 1 − x grown on GaAs (001) by molecular beam epitaxy
Author:
Appeared in: Microelectronics reliability
Paging: Volume 30 (1990) nr. 3 pages 626
Year: 1990
Contents:
Publisher: Pergamon Press plc
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 94 of 153 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands