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Journal description
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Details for article 52 of 215 found articles
| Title: |
Complete exploration of the silicon gap at the Si-SiO2 interface of MIS tunnel diodes using the conductance technique at various temperatures and illumination levels |
| Author: | |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 26 (1986) nr. 4 pages 1 p. |
| Year: |
1986 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 52 of 215 found articles
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