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Journal description
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Details for article 131 of 194 found articles
| Title: |
4477962 Process for and structure of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines |
| Author: |
Godejahn, GordonC |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 25 (1985) nr. 3 pages 1 p. |
| Year: |
1985 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 131 of 194 found articles
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