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                                       Details for article 125 of 198 found articles
 
 
  Plasma enhanced deposition of “silicon nitride” for use as an encapsulant for silicon ion-implanted gallium arsenide
 
 
Title: Plasma enhanced deposition of “silicon nitride” for use as an encapsulant for silicon ion-implanted gallium arsenide
Author:
Appeared in: Microelectronics reliability
Paging: Volume 24 (1984) nr. 5 pages 1 p.
Year: 1984
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 125 of 198 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands