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Details for article 1 of 171 found articles
| Title: |
A computer-aided simulation model for the I–V characteristic of M-n-p silicon Schottky-barrier diodes produced by use of low-energy arsenic-ion implantation |
| Author: | |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 24 (1984) nr. 3 pages 2 p. |
| Year: |
1984 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 1 of 171 found articles
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