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Journal description
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Details for article 20 of 163 found articles
| Title: |
A physical model for the dependence of carrier lifetime on doping density in nondegenerate silicon |
| Author: | |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 23 (1983) nr. 2 pages 1 p. |
| Year: |
1983 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 20 of 163 found articles
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