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Journal description
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Details for article 12 of 189 found articles
| Title: |
Analysis of the effects of mechanical stress on the properties of p-channel MOS structures. Part I. Choice of the theoretical model. The effect of stress on the valence band structure in silicon |
| Author: | |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 20 (1980) nr. 3 pages 1 p. |
| Year: |
1980 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 12 of 189 found articles
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