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                                       Details for article 117 of 132 found articles
 
 
  The energy levels and the defect signature of sulfurimplanted silicon by thermally stimulated measurements
 
 
Title: The energy levels and the defect signature of sulfurimplanted silicon by thermally stimulated measurements
Author:
Appeared in: Microelectronics reliability
Paging: Volume 18 (1978) nr. 4 pages 1 p.
Year: 1978
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 117 of 132 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands