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                                       Details for article 13 of 22 found articles
 
 
  Modeling total ionizing dose radiation effects in p-type polycrystalline silicon thin film transistors
 
 
Title: Modeling total ionizing dose radiation effects in p-type polycrystalline silicon thin film transistors
Author: Peng, Shaoman
Shan, Haoliang
Yang, Ruifan
Liu, Yuan
Deng, Wanling
Appeared in: Microelectronics reliability
Paging: Volume 171 () nr. C pages p.
Year: 2025
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 13 of 22 found articles
 
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