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                                       Details for article 122 of 137 found articles
 
 
  The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon
 
 
Title: The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon
Author:
Appeared in: Microelectronics reliability
Paging: Volume 17 (1978) nr. 3 pages 1 p.
Year: 1978
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 122 of 137 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands