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  A non-volatile and radiation-hardened SRAM based on fourteen transistors and two perpendicular anisotropy magnetic tunnel junctions
 
 
Title: A non-volatile and radiation-hardened SRAM based on fourteen transistors and two perpendicular anisotropy magnetic tunnel junctions
Author: Yang, Pei
Li, Kaixuan
Zhu, Yunjiao
Duan, Xinpei
Yin, Yanan
Chen, Jiawei
Wang, Tao
Zhou, Xinjie
Appeared in: Microelectronics reliability
Paging: Volume 166 () nr. C pages p.
Year: 2025
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

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 Koninklijke Bibliotheek - National Library of the Netherlands