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                                       Details for article 14 of 14 found articles
 
 
  Single event effects hardening in SiC double-trench MOSFETs
 
 
Title: Single event effects hardening in SiC double-trench MOSFETs
Author: Sun, Shuqing
Chen, Feida
Sun, Yongbo
Li, Yongxing
Yang, Kun
Tang, Xiaobin
Appeared in: Microelectronics reliability
Paging: Volume 164 () nr. C pages p.
Year: 2025
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 14 of 14 found articles
 
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