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                                       Details for article 5 of 26 found articles
 
 
  A SEGR hardened trench gate DMOS with stepped source and optimized LOCOS structure
 
 
Title: A SEGR hardened trench gate DMOS with stepped source and optimized LOCOS structure
Author: Zhang, Yanfei
Gong, Xueqin
Liu, Mengxin
Wen, Xiaoxia
Cai, Xiaowu
Appeared in: Microelectronics reliability
Paging: Volume 162 () nr. C pages p.
Year: 2024
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 5 of 26 found articles
 
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