|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 3 of 19 found articles
| Title: |
Analyzing false turn-on events with varying gate drive parameters in high voltage GaN devices |
| Author: |
Kashyap, Nishant Sarkar, Arghyadeep |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 160 () nr. C pages p. |
| Year: |
2024 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 3 of 19 found articles
| << previous | next >> |