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Details for article 113 of 148 found articles
| Title: |
Resistivity decrease due to electron spin resonance in the metallic region of heavily phosphorous-doped silicon |
| Author: | |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 15 (1976) nr. 1 pages 1 p. |
| Year: |
1976 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 113 of 148 found articles
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