Digital Library
Close Browse articles from a journal
 
<< previous    next >>
     Journal description
       All volumes of the corresponding journal
         All issues of the corresponding volume
           All articles of the corresponding issues
                                       Details for article 12 of 27 found articles
 
 
  Influence of deep level trap charges on the reliability of asymmetric doped double gate JunctionLess transistor (AD-DG-JLT)
 
 
Title: Influence of deep level trap charges on the reliability of asymmetric doped double gate JunctionLess transistor (AD-DG-JLT)
Author: Kumari, Vandana
Nisa, Khan Mehar Un
Gupta, Mridula
Saxena, Manoj
Appeared in: Microelectronics reliability
Paging: Volume 148 () nr. C pages p.
Year: 2023
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 12 of 27 found articles
 
<< previous    next >>
 
 Koninklijke Bibliotheek - National Library of the Netherlands