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Details for article 37 of 37 found articles
| Title: |
Threshold voltage shift model for p-GaN gate enhancement mode HEMT |
| Author: |
Zhang, Cong Yao, Ruohe |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 147 () nr. C pages p. |
| Year: |
2023 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 37 of 37 found articles
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