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Journal description
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Details for article 63 of 115 found articles
| Title: |
Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors |
| Author: |
Favero, D. De Santi, C. Mukherjee, K. Borga, M. Geens, K. Chatterjee, U. Bakeroot, B. Decoutere, S. Rampazzo, F. Meneghesso, G. Zanoni, E. Meneghini, M. |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 138 () nr. C pages p. |
| Year: |
2022 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 63 of 115 found articles
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