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                                       Details for article 13 of 27 found articles
 
 
  Failure mechanism of 4H-SiC junction barrier Schottky diodes under harsh thermal cycling stress
 
 
Title: Failure mechanism of 4H-SiC junction barrier Schottky diodes under harsh thermal cycling stress
Author: Zhang, Yuan-Lan
Zhang, Jie
Ma, Hong-Ping
Chi, Yan-Qing
Tian, Hao-Ran
Liu, Jian-Hua
Liu, Qi-Bin
Chen, Zhong-Guo
Zhang, Qingchun Jon
Appeared in: Microelectronics reliability
Paging: Volume 136 () nr. C pages p.
Year: 2022
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 13 of 27 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands