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                                       Details for article 30 of 34 found articles
 
 
  The mechanism of heavy ion incident angle on the reliability of MOS device
 
 
Title: The mechanism of heavy ion incident angle on the reliability of MOS device
Author: Li, Zongzhen
Jiao, Yang
Bi, Jinshun
Liu, Tianqi
Zhao, Shiwei
Liu, Yuzhu
Zhang, Shengxia
Hu, Peipei
Yan, Xiaoyu
Zhai, Pengfei
Liu, Jie
Appeared in: Microelectronics reliability
Paging: Volume 135 () nr. C pages p.
Year: 2022
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 30 of 34 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands