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Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability |
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Title: |
Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability |
Author: |
Gallardo, Jethro Oroceo Dash, Sachidananda Tran, Thanh Nga Huang, Zhen-Hong Tang, Shun-Wei Wellekens, Dirk Bakeroot, Benoit Syshchyk, Olga De Jaeger, Brice Decoutere, Stefaan Wu, Tian-Li |
Appeared in: |
Microelectronics reliability |
Paging: |
Volume 134 () nr. C pages p. |
Year: |
2022 |
Contents: |
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Publisher: |
Elsevier Ltd |
Source file: |
Elektronische Wetenschappelijke Tijdschriften |
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