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                                       Details for article 6 of 12 found articles
 
 
  Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability
 
 
Title: Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability
Author: Gallardo, Jethro Oroceo
Dash, Sachidananda
Tran, Thanh Nga
Huang, Zhen-Hong
Tang, Shun-Wei
Wellekens, Dirk
Bakeroot, Benoit
Syshchyk, Olga
De Jaeger, Brice
Decoutere, Stefaan
Wu, Tian-Li
Appeared in: Microelectronics reliability
Paging: Volume 134 () nr. C pages p.
Year: 2022
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 6 of 12 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands