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                                       Details for article 3 of 10 found articles
 
 
  Degradation of 650 V SiC double-trench MOSFETs under repetitive overcurrent switching stress
 
 
Title: Degradation of 650 V SiC double-trench MOSFETs under repetitive overcurrent switching stress
Author: Wang, Lihao
Jia, Yunpeng
Zhou, Xintian
Zhao, Yuanfu
Hu, Dongqing
Wu, Yu
Wang, Liang
Li, Tongde
Deng, Zhonghan
Appeared in: Microelectronics reliability
Paging: Volume 133 () nr. C pages p.
Year: 2022
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 3 of 10 found articles
 
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